n-channel enhancement mode power mosfet description the RM6005S4 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features ? v ds =60v,i d =5a r ds(on) < 55m
@ v gs =10v ? typ: 46m
? r ds(on) < 80m
@ v gs =4.5v ? typ: 60m
? application ? power switching application ? hard switched and high frequency circuits ? uninterruptible power supply d g s schematic diagram sot-223-3l view package marking and ordering information device marking device device package reel size tape width quantity 6005 RM6005S4 sot-223-3l ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 5 a drain current-continuous(t c =100 ) i d (100 ) 3.5 a pulsed drain current i dm 20 a maximum power dissipation p d 2 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 62.5 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 69 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a RM6005S4 2017-01 rev:o15
gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1.2 2 2.5 v v gs =10v, i d =4.5a 46 55 drain-source on-state resistance r ds(on) v gs =4.5v, i d =4a 60 80 forward transconductance g fs v ds =5v,i d =4.5a 11 - - s dynamic characteristics (note4) input capacitance c lss 450 pf output capacitance c oss 60 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz 25 pf switching characteristics (note 4) turn-on delay time t d(on) - 4.7 - ns turn-on rise time t r - 2.3 - ns turn-off delay time t d(off) - 15.7 - ns turn-off fall time t f v ds =30v,i d =4.5a v gs =10v,r gen =3
- 1.9 - ns total gate charge q g - 8.5 - nc gate-source charge q gs - 1.6 - nc gate-drain charge q gd v ds =30v,i d =4.5a, v gs =10v - 2.2 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =5a - - 1.2 v diode forward current (note 2) i s - - 5 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t ? 10 sec. 3. pulse test: pulse width ? 300 s, duty cycle ? 2%. 4. guaranteed by design, not subject to production " " " " " " " m
m
test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit " " " " " " "
vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance ( m
) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) rating and characteristics curves (RM6005S4) " " " " " " "
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal impedance normalized bvdss vth (v) variance rating and characteristics curves (RM6005S4) " " " " " " "
sot-223-3l package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. " " " " " " "
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